SUD50P04-23-E3【PDF 2/8 页】MOSFET P-CH D-S 40V TO252

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页 6页

SUD50P04-23

Vishay Siliconix

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

Δ V DS /T J

Δ V GS(th) /T J

V GS = 0 V, I D = - 250 μA

I D = - 250 μA

- 40

- 40

3.7

V

mV/°C

Gate-Source Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

-0.8

-2

V

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 16 V

V DS = - 40 V, V GS = 0 V

V DS = - 40 V, V GS = 0 V, T J = 100 °C

V DS ≥ - 5 V, V GS = - 10 V

- 30

± 100

-1

- 20

nA

μA

A

Drain-Source On-State

Resistance a

R DS(on)

V GS = - 10 V, I D = - 15 A

V GS = - 4.5 V, I D = - 10 A

0.019

0.024

0.023

0.030

Ω

Forward Transconductance a

g fs

V DS = 15 V, I D = - 15 A

30

S

Dynamic b

Input Capacitance

C iss

1880

Output Capacitance

Reverse Transfer Capacitance

C oss

C rss

V DS = - 20 V, V GS = 0 V, f = 1 MHz

286

192

pF

Total Gate Charge

Gate-Source Charge

Q g

Q gs

V DS = - 20 V, V GS = - 10 V, I D = - 30 A

V DS = - 20 V, V GS = - 4.5 V, I D = - 30 A

43.5

20.6

4.6

65

31

nC

Gate-Drain Charge

Q gd

7.6

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

R g

t d(on)

t r

t d(off)

t f

t d(on)

t r

t d(off)

t f

f = 1 MHz

V DD = - 20 V, R L = 0.66 Ω

I D ? - 30 A, V GEN = - 4.5 V, R g = 1 Ω

V DD = - 20 V, R L = 0.66 Ω

I D ? - 30 A, V GEN = - 10 V, R g = 1 Ω

3

22

217

42

21

8

12

36

9

5

35

325

65

32

15

20

55

15

Ω

ns

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current a

I S

I SM

T C = 25 °C

- 20

- 50

A

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

V SD

t rr

Q rr

t a

t b

I S = - 10 A

I F = - 20 A, dI/dt = 100 A/μs, T J = 25 °C

- 0.85

44

53

18

26

- 1.2

66

80

V

ns

nC

ns

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 74423

S-81956-Rev. B, 25-Aug-08

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

SUD50P04-40P-T4-E3 MOSFET P-CH D-S 40V TO252

SUD50P06-15L-T4-E3 MOSFET P-CH D-S 60V TO252

SUD50P08-26-E3 MOSFET P-CH D-S 80V TO252

SUD50P10-43-E3 MOSFET P-CH D-S 100V TO252

SUD50P10-43L-E3 MOSFET P-CH D-S 100V TO252

SUM110N04-2M1P-E3 MOSFET N-CH D-S 40V D2PAK

SUM110N05-06L-E3 MOSFET N-CH D-S 55V D2PAK

SUM110N06-3M9H-E3 MOSFET N-CH 60V 110A D2PAK

相关代理商/技术参数

SUD50P04-23-GE3 功能描述:MOSFET P-CH D-S 40V TO252 RoHS:是类别:分离式半导体产品 >> FET - 单系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔封装/外壳:TO-220-3 整包供应商设备封装:TO-220FP 包装:管件

SUD50P04-34-E3 功能描述:MOSFET 40V 20A 33.3W 34mohm @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SUD50P04-40P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) MOSFET

SUD50P04-40P-E3 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) MOSFET

SUD50P04-40P-T4-E3 功能描述:MOSFET 40V 8.0A 24W 40mohm @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SUD50P06-15 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET

SUD50P06-15-GE3 功能描述:MOSFET 60V 50A 113W 15mohm @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SUD50P06-15L 功能描述:MOSFET 60V 50A 136W RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube